| 摘要 |
PROBLEM TO BE SOLVED: To efficiently polish an outer periphery of a silicon substrate by using a polishing tape under polishing conditions respectively suited to a deposition film and silicon arranged under the deposition film. SOLUTION: While rotating a device substrate 14 configured by depositing a deposition film on the surface of silicon at a first rotation speed, a first polishing tape 34 is pressed to the outer periphery of the device substrate 14 to remove the deposition film 12 located on the outer periphery of the device substrate 14, and while rotating the device substrate 14 at a second rotational speed, a second polishing tape 52 is pressed to the silicon 10 located on the outer periphery of the device substrate 14 exposed by removing the deposition film 12 to grind the silicon 10 up to predetermined depth. COPYRIGHT: (C)2011,JPO&INPIT |
