| 摘要 |
PROBLEM TO BE SOLVED: To prevent copper from being diffused into a low-dielectric-constant film by using a manganese-containing material. SOLUTION: In a film-forming apparatus 100, by the control of a control section 70, the inside of a treatment vessel 1 is vacuumized, and a film-forming gas containing a low-dielectric-constant material and a manganese-containing material is fed to a wafer W through gas discharge holes 13a and 13b of a shower head 11 while the wafer W is heated by a heater 6. A high-frequency power source 23 supplies high-frequency power to the shower head 11 to dissociate the film-forming gas, thereby generating the plasma of the film-forming gas in the treatment vessel 1. The plasma forms a SiCOH film containing manganese on a surface of the wafer W. COPYRIGHT: (C)2011,JPO&INPIT
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