| 发明名称 |
Fully Depleted SOI Multiple Threshold Voltage Application |
| 摘要 |
An integrated circuit comprises a substrate and a buried dielectric formed in the substrate. The buried dielectric has a first thickness in a first region, a second buried dielectric thickness in a second region, and a step between the first and second regions. A semiconductor layer overlies the buried dielectric. |
| 申请公布号 |
US2011212579(A1) |
申请公布日期 |
2011.09.01 |
| 申请号 |
US201113100673 |
申请日期 |
2011.05.04 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN HAO-YU;CHANG CHANG-YUN;LEE DI-HONG;YANG FU-LIANG |
| 分类号 |
H01L21/8234;H01L21/265;H01L21/28;H01L21/762;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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