| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device with high efficiency of internal quantum, and also with high efficiency of light extraction. <P>SOLUTION: The semiconductor light emitting device is provided, which includes an n-type semiconductor layer 10 containing a nitride semiconductor, a p-type semiconductor layer 20 containing a nitride semiconductor, and a light emitting part 30 provided between the n-type semiconductor layer and the p-type semiconductor layer and having a plurality of barrier layers 31 and a plurality of well layers 32 which are alternately stacked. An average In composition ratio at a p-side end in the well layer and the barrier layer the nearest to the p-type semiconductor layer is larger than an average In composition ratio at an n-side end in the well layer and the barrier layer the nearest to the n-type semiconductor layer and five times or less of the average In composition ratio at the n-side end. <P>COPYRIGHT: (C)2011,JPO&INPIT |
