发明名称 WIRING STRUCTURE OF THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a three-dimensional semiconductor device improved in both an integration degree and reliability. <P>SOLUTION: A wiring structure of this three-dimensional semiconductor device is provided. The three-dimensional semiconductor device includes: stacked structures arranged two-dimensionally on a three-dimensional substrate; a first wiring layer including first wires and disposed on the stacked structures; and a second wiring layer including second wires and disposed on the first wiring layer. Each of the stacked structures has a lower structure including a plurality of sequentially-stacked lower word lines, and an upper structure including a plurality of sequentially-stacked upper word lines and disposed on the lower structure. Each of the first wires is connected to one of the lower word lines and each of the second wires is connected to one of the upper word lines. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011171735(A) 申请公布日期 2011.09.01
申请号 JP20110029611 申请日期 2011.02.15
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM DOO-GON;CHAE DONGHYUK
分类号 H01L27/10;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L27/10
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