| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device for storing data by using a transistor whose leakage current between a source and a drain in an off state is small as a writing transistor. <P>SOLUTION: In a matrix formed using a plurality of memory cells in which a drain of the writing transistor is connected to a gate of a reading transistor and the drain of the writing transistor is connected to one electrode of a capacitor, a gate of the writing transistor is connected to a writing word line, a source of the writing transistor is connected to a writing bit line, and a source and a drain of the reading transistor are connected to a reading bit line and a bias line. Furthermore, the other electrode of the capacitor is connected to a reading word line. In order to reduce the number of pieces of wiring, the writing bit line or the bias line in the other row is substituted for the reading bit line. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
