发明名称 TRANSISTORS WITH IMMERSED CONTACTS
摘要 Embodiments of a semiconductor structure include a first current electrode region, a second current electrode region, and a channel region. The channel region is located between the first current electrode region and the second current electrode region, and the channel region is located in a fin structure of the semiconductor structure. A carrier transport in the channel region is generally in a horizontal direction between the first current electrode region and the second current electrode region.
申请公布号 US2011210395(A1) 申请公布日期 2011.09.01
申请号 US201113105484 申请日期 2011.05.11
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 ORLOWSKI MARIUS K.;BURNETT JAMES D.
分类号 H01L27/12 主分类号 H01L27/12
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