| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a small element area and an element with a high pressure resistance, and also to provide a manufacturing method of the same. SOLUTION: A semiconductor device is equipped with: a substrate 11; a first one-conductive type semiconductor layer 13 formed on the substrate; a second one-conductor type semiconductor layer 15 with a low impurity concentration formed on the first semiconductor layer; a MOS transistor 75 formed in an element region 71 separated by an isolation region 50; a one-conductor type region 17 with a high impurity concentration extended from one main surface to the first semiconductor layer in the element region; and an insulation region 60 provided between the region 17 and a drain region 35 of the MOS transistor. The insulation region 60 extends from the one main surface 10 to the first semiconductor layer 13, and does not reaches the substrate 11. COPYRIGHT: (C)2011,JPO&INPIT
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