SOLID-STATE IMAGE PICKUP ELEMENT AND DRIVING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a solid-state image pickup element that can prevent the risk of charge injection from a substrate via a diffusion layer under the carrier pocket. SOLUTION: The solid-state image pickup element has a light-receiving diode, having a P--well region 3 formed in an N--type layer with an N--type layer 2 left in the surface layer of the semiconductor substrate and is equipped with a light-receiving region for generating a light-producing charge through light irradiation; a carrier pocket 6, where the light-producing charge is accumulated; a P+-type high-concentration diffusion layer 5 for discharging the light-producing charge accumulated in the carrier pocket; gate insulating films 1a and 1b formed on the carrier pocket and also on both the carrier pocket 6 and the P+-type high-concentration diffusion layer 5; a gate electrode 4 formed on the gate insulating films; and source and drain sections formed in the N--type layer 2. COPYRIGHT: (C)2011,JPO&INPIT