| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that prevents capacity between a source/drain region and a substrate from decreasing and reduces a punch-through phenomenon. SOLUTION: The method of manufacturing the semiconductor device includes the processes of: forming gate electrodes on the substrate of the semiconductor with first insulating films interposed; forming a second insulating film covering upper surfaces and side surfaces of the gate electrodes; forming grooves in a surface of the semiconductor substrate using the second insulating film as a mask; forming third insulating films on bottom surfaces of the grooves to a thickness such that upper portions of sidewalls of the grooves are still exposed; forming epitaxial layers of a semiconductor on the third insulating layers through epitaxial growth starting at the upper portions of the sidewalls of the exposed grooves; and forming source/drain regions by introducing an impurity into the epitaxial layer. COPYRIGHT: (C)2011,JPO&INPIT
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