| 摘要 |
A method for forming a channel layer with high Ge content on a substrate is provided. The method may comprise steps of: preparing the substrate (110), forming a dielectric layer (120) on the substrate (110), lithographing and etching the dielectric layer (120) to form at least one hole in the dielectric layer to grow a channel layer (130) with high Ge content; and growing the channel layer with high Ge content (130) in the at least one hole by a low temperature reduced pressure chemical vapor deposition (RPCVD).
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