发明名称 FOCUSED ION BEAM DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To achieve a stable irradiation of a beam without using a complicated adjusting mechanism. <P>SOLUTION: A focused ion beam device includes: a needle-like chip 1; a gas-supplying part including a gas nozzle 2 for an ion source and a gas supply source 3 for the ion source to supply gas to the chip 1; an extraction electrode 4 applying voltage with the chip 1 and extracting ions by ionizing the gas adsorbed onto a surface of the chip 1; an ion gun part 19 including a cathode electrode 5 accelerating ions toward a sample 13; a gun alignment electrode 9 located closer to the sample 13 than the ion gun part 19 and adjusting an irradiation direction of an ion beam 11 emitted from the ion gun part 19; and a lens system including a focusing lens electrode 6 focusing the ion beam 11 on the sample 13 and an objective lens electrode 8. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011171009(A) 申请公布日期 2011.09.01
申请号 JP20100031605 申请日期 2010.02.16
申请人 SII NANOTECHNOLOGY INC 发明人 OGAWA TAKASHI;NISHINAKA KENICHI;SUGIYAMA YASUHIKO
分类号 H01J37/317;H01J27/26;H01J37/04;H01J37/08;H01J37/09;H01J37/147 主分类号 H01J37/317
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