| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide insulated gate type semiconductor element 100 having a high breakdown voltage and high performance. SOLUTION: A terminating structure of the silicon carbide insulated gate type semiconductor element 100 has: a semiconductor layer 132 of the first conductivity provided with a first main surface 137; a gate electrode 142; and source wiring 101. An outer peripheral resurf region 105 is provided, and a body region 133 of the second conductivity, a source region 134 of the first conductivity, a contact region 135 of the second conductivity, and the outer peripheral resurf region 105 of the second conductivity are provided inside the semiconductor layer 132. For the outer peripheral resurf region 105, the width of a part not including the body region 133 is at least 1/2 or more of the thickness of the semiconductor layer 132. COPYRIGHT: (C)2011,JPO&INPIT |
