Power semiconductor module for use on printed circuit board, has planar, structured metallization arranged on insulating substrate, where metallization has connected portion, and bonding wire bonded at bonding areas at connected portion

摘要

The module has a circuitry carrier provided with an insulating substrate (20), and a planar, structured upper metallization (21) arranged on the insulating substrate, where the structured metallization has a connected portion (31). A bonding wire is bonded at bonding areas (41, 42) at the connected portion. An insulating carrier is made of ceramic, where the insulating carrier and the structured metallization are directly interconnected with one another. The metallization has thickness of 100 micrometer to 800 micrometer or from 200 micrometer to 500 micrometer. The structured metallization is made of copper. An independent claim is also included for a method for manufacturing a power semiconductor module.