Semiconductor laser device has semiconductor laser chip incorporating active layer, that is arranged on submount

摘要

The semiconductor laser device comprises a semiconductor laser chip incorporating an active layer from which electromagnetic radiation is emitted. A lateral expansion region of about 60-100 mu m, is formed within the semiconductor laser chip. The semiconductor laser chip is arranged on a submount made of ceramic material or metal material. A portion of semiconductor laser chip is arranged within the recess (22) formed in the submount. An independent claim is included for manufacturing method of semiconductor laser device.