| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a ZnO-based transparent conductive film having moisture resistance of a practical level and characteristics required as the transparent conductive film, and excellent in economical efficiency. <P>SOLUTION: The transparent conductive film grown on a base by doping ZnO with a group-III element oxide is formed to have a Zn (002) rocking curve half-width of 13.5°or more. ZnO is doped with the group-III element oxide so that the rate of the group-III element oxide in the transparent conductive film is 7-40 wt.% by adjusting the dose of the group-III element oxide. The transparent conductive film is formed on the base element via an SiNx thin film. The transparent conductive film is formed on the base by a thin film-forming method while applying a bias voltage to the base. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
