| 发明名称 |
Method of depositing SiO2 films |
| 摘要 |
This invention relates to a method of depositing an inorganic SiO 2 film at temperatures below 250°C using plasma enhanced chemical vapour deposition (PECVD) in a chamber including supplying tetraethylorthosilicate (TEOS) and O 2 , or a source thereof, as precursors, with an O 2 /TEOS ratio of between 15:1 and 25:1. |
| 申请公布号 |
EP2362003(A2) |
申请公布日期 |
2011.08.31 |
| 申请号 |
EP20100275131 |
申请日期 |
2010.12.20 |
| 申请人 |
SPP PROCESS TECHNOLOGY SYSTEMS UK LIMITED |
发明人 |
Giles, Katherine;Price, Andrew;Burgess, Stephen Robert;Archard, Daniel Thomas |
| 分类号 |
C23C16/40;C23C16/455;C23C16/50;C23C16/505;C23C16/52;C23C16/56 |
主分类号 |
C23C16/40 |
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