发明名称 |
MEMORY SYSTEM AND ACCESS METHOD THEREOF |
摘要 |
Integrated circuit memory systems and methods include comparing a number of erase cycles of a memory block corresponding to a read request to a first value and reading data stored in the memory block according to a first read condition corresponding to a first reliability improvement operation when the number of erase cycles of the memory block is less than the first value. An error of the data read according to the first read condition may be corrected using an error correction code (ECC) when the error of the data read according to the first read condition is correctable. |
申请公布号 |
KR20110097084(A) |
申请公布日期 |
2011.08.31 |
申请号 |
KR20100016724 |
申请日期 |
2010.02.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JIN HYEOK;OH, HWA SEOK |
分类号 |
G06F13/16;G06F11/08;G06F12/02 |
主分类号 |
G06F13/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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