Vertical power semiconductor device and method of making the same

摘要

A power MOSFET (10) includes a semiconductor substrate having a drift region (102) therein and a transition region (130) that extends between the drift region and a first surface (102a) of the semiconductor substrate. The transition region has a vertically retrograded doping profile therein that peaks at a first depth relative to the first surface. First and second trenches (104) in which an insulated electrode (106,110) is located are moreover provided in the semiconductor substrate. First and second base shielding regions (128) may be provided under respective first and second base regions (126) to deplete the transition region.