发明名称
摘要 A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.
申请公布号 JP4759315(B2) 申请公布日期 2011.08.31
申请号 JP20050148794 申请日期 2005.05.20
申请人 发明人
分类号 C23C16/27;C01B31/06;C23C16/511;H01L39/12;H01L39/24 主分类号 C23C16/27
代理机构 代理人
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