发明名称 |
Field transistors for electrostatic discharge protection and methods for fabricating the same |
摘要 |
A field transistor for electrostatic discharge (ESD) protection and method for making such a transistor is described. The field transistor includes a gate conductive layer pattern formed on a field oxide layer. Since the gate conductive layer pattern is formed on the field oxide layer, a thin gate insulating layer having a high possibility of insulation breakdown is not used. To form an inversion layer for providing a current path between source and drain regions, a field oxide layer is interposed to form low concentration source and drain regions overlapped by the gate conductive layer pattern.
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申请公布号 |
US8008725(B2) |
申请公布日期 |
2011.08.30 |
申请号 |
US20020071494 |
申请日期 |
2002.02.06 |
申请人 |
FAIRCHILD KOREA SEMICONDUCTOR LTD |
发明人 |
KANG TAEG-HYUN;RYU JUN-HYEONG;KIM JONG-HWAN |
分类号 |
H01L27/04;H01L27/088;H01L21/336;H01L27/02;H01L29/78 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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