发明名称 |
Metallization and its use in, in particular, an IGBT or a diode |
摘要 |
The invention relates to a metallization for an IGBT or a diode. In the case of this metallization, a copper layer (10, 12) having a layer thickness of approximately 50 μm is applied to the front side and/or rear side of a semiconductor body (1) directly or if need be via a diffusion barrier layer (13, 14). The layer (8, 12) has a specific heat capacity that is at least a factor of 2 higher than the specific heat capacity of the semiconductor body (1). It simultaneously serves for producing a field stop layer (5) by proton implantation through the layer (12) from the rear side and for masking a proton or helium implantation for the purpose of charge carrier lifetime reduction from the front side of the chip (1).
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申请公布号 |
US8008712(B2) |
申请公布日期 |
2011.08.30 |
申请号 |
US20050082192 |
申请日期 |
2005.03.16 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HILLE FRANK;SCHULZE HANS-JOACHIM |
分类号 |
H01L29/66;H01L21/263;H01L21/266;H01L21/28;H01L29/32;H01L29/41;H01L29/417;H01L29/739;H01L29/861 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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