| 摘要 |
A semiconductor device includes a first metal layer provided above a semiconductor substrate, an interlayer insulating film provided above the first metal layer, a second metal layer that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, the second metal layer being connected to the first metal layer, and a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer.
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