发明名称 Memory cell array with low resistance common source and high current drivability
摘要 In the present resistive memory array, included are a substrate, a plurality of source regions in the substrate, and a conductor connecting the plurality of source regions, the conductor being positioned adjacent to the substrate to form, with the plurality of source regions, a common source. In one embodiment, the conductor is an elongated metal body of T-shaped cross-section. In another embodiment, the conductor is a plate-like metal body.
申请公布号 US8008645(B2) 申请公布日期 2011.08.30
申请号 US20070985018 申请日期 2007.11.13
申请人 SPANSION LLC 发明人 TAGUCHI MASAO
分类号 H01L47/00 主分类号 H01L47/00
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