Semiconductor device, and manufacturing method thereof

摘要

To provide a manufacturing method of a semiconductor device which can improve the reliability of the semiconductor device. A first insulating film for covering a semiconductor element formed in a semiconductor substrate is formed by a thermal CVD method or the like which has a good embedding property. A second insulating film is formed to cover the first insulating film by a plasma CVD method which has excellent humidity resistance. A plug is formed to penetrate the first insulating film and the second insulating film. A third insulating film comprised of a low-k film having a relatively low dielectric constant is formed over the second insulating film. A wiring is formed in the third insulating film by a damascene technique to be electrically coupled to the plug.