发明名称 Process for fabricating piezoelectric element
摘要 In a production method of a piezoelectric element, an unneeded electric field is prevented from being applied to a piezoelectric thin film layer during the production process, resulting in a high performance piezoelectric element production method. The production method includes a first process for depositing an under electrode layer, a piezoelectric thin film layer and an upper electrode layer successively on a substrate such that the under electrode layer and the upper electrode layer form a short-circuit, a second process, after the first process, for etching including dry etching, the second process commenced while the under electrode layer and the upper electrode layer are short-circuited, a third process, after the second process, for polarizing by applying a voltage across the under electrode layer and the upper electrode layer, a fourth process, after the third process, for individualizing each piezoelectric element.
申请公布号 US8006357(B2) 申请公布日期 2011.08.30
申请号 US20060813551 申请日期 2006.02.15
申请人 PANASONIC CORPORATION 发明人 NAKAMURA YUKI;MURASHIMA YUJI;YASUMI MASAHIRO;KOMAKI KAZUKI
分类号 H01L41/22;B21D53/76;B23P17/00;H04R17/00 主分类号 H01L41/22
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