| 摘要 |
An IGFET device includes:—a semiconductor body (2) having a major surface,—a source region (3) of first conductivity type abutting the surface,—a drain region (6,7) of the first conductivity-type abutting the surface and spaced from the source region with a channel (5) therefrom,—an active gate (8) overlying the channel and insulated from the channel by a first dielectric material (9) forming the gate oxide of the IGFET device,—a dummy gate (10) positioned between the active gate and the drain and insulated from the active gate by a second dielectric material so that a capacitance is formed between the active gate and the dummy gate, and insulated from the drain region by the gate oxide, wherein the active gate and the dummy gate are forming the electrodes of the capacitance substantially perpendicular to the surface.
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