发明名称 Gate-boosted, variable voltage supply rail amplifier
摘要 In at least one embodiment, an electronic system includes an amplifier having an on-chip charge pump to provide a gate boost voltage to boost a gate voltage of at least one on-chip field effect transistor (FET) of an output stage of an amplifier. In at least one embodiment, the gate boost voltage boosts the gate voltage higher than the supply voltage rail to increase an overdrive voltage of the on-chip FET. In at least one embodiment, the gate boost voltage boosts the DC bias of an input signal and, thus, generation of gate boost voltage by the on-chip charge pump is signal-independent, i.e. independent of the input signal. Increasing the overdrive voltage increases the efficiency of the amplifier by decreasing the difference between the maximum swing of the output voltage and the voltage supply rails of the at least one on-chip FET relative to conventional designs.
申请公布号 US8008975(B1) 申请公布日期 2011.08.30
申请号 US20090415788 申请日期 2009.03.31
申请人 CIRRUS LOGIC, INC. 发明人 ALLEN DANIEL J.;SWANSON ERIC J.;WOODFORD SCOTT A.
分类号 H03F3/04 主分类号 H03F3/04
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