发明名称 Memory architecture having multiple partial wordline drivers and contacted and feed-through bitlines
摘要 Various embodiments are disclosed relating to a memory circuit architecture. In an example embodiment, which may accommodate a change to a new memory size or cell aspect ratio, while migrating between different process nodes or the same process generation, while retaining at least a portion of the periphery circuitry, a memory circuit architecture may be employed in which the memory array is divided into an upper half and a lower half, thereby splitting the cache Ways among the two halves. The wordline may be split among the two array halves, with each half driven by a half wordline driver. Also, in another embodiment, two sets of bitlines may be provided for each column, including a contacted set of bitlines and a feed-through set of bitlines.
申请公布号 US8009506(B2) 申请公布日期 2011.08.30
申请号 US20100730873 申请日期 2010.03.24
申请人 BROADCOM CORPORATION 发明人 SUNG RAYMOND J.;SUH DONGWOOK;RODRIGUEZ DANIEL O.
分类号 G11C8/00 主分类号 G11C8/00
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