| 摘要 |
A deep trench varactor structure compatible with a deep trench capacitor structure and methods of manufacturing the same are provided. A buried plate layer is formed on a second deep trench, while the first trench is protected from formation of any buried plate layer. The inside of the deep trenches is filled with a conductive material to form inner electrodes. At least one doped well is formed outside and abutting portions of the first deep trench and constitutes at least one outer varactor electrode. Multiple doped wells may be connected in parallel to provide a varactor having complex voltage dependency of capacitance. The buried plate layer and another doped well connected thereto constitute an outer electrode of a linear capacitor formed on the second deep trench.
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