发明名称 |
Light emitting device having light extraction structure and method for manufacturing the same |
摘要 |
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
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申请公布号 |
US8008103(B2) |
申请公布日期 |
2011.08.30 |
申请号 |
US20090637653 |
申请日期 |
2009.12.14 |
申请人 |
LG INNOTEK CO., LTD.;LG ELECTRONICS INC. |
发明人 |
CHO HYUN KYONG;KIM SUN KYUNG;JANG JUN HO |
分类号 |
H01L21/00;H01L21/18;H01L33/22;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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