发明名称 Light emitting device having light extraction structure and method for manufacturing the same
摘要 A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
申请公布号 US8008103(B2) 申请公布日期 2011.08.30
申请号 US20090637653 申请日期 2009.12.14
申请人 LG INNOTEK CO., LTD.;LG ELECTRONICS INC. 发明人 CHO HYUN KYONG;KIM SUN KYUNG;JANG JUN HO
分类号 H01L21/00;H01L21/18;H01L33/22;H01L33/32 主分类号 H01L21/00
代理机构 代理人
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