发明名称 |
ESD improvement with dynamic substrate resistance |
摘要 |
In some embodiments, an electrostatic discharge (ESD) protection circuit includes a substrate resistance control circuit coupled to a body of a first NMOS transistor. The substrate resistance control circuit increases a resistance of the body of the first NMOS transistor during an ESD event. The first NMOS transistor has a drain coupled to an input/output (I/O) pad and a gate coupled to a first voltage source. The first voltage source is set at ground potential.
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申请公布号 |
US8009399(B2) |
申请公布日期 |
2011.08.30 |
申请号 |
US20090548586 |
申请日期 |
2009.08.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LAI DA-WEI |
分类号 |
H02H9/00;H02H1/00;H02H1/04;H02H3/22;H02H7/12 |
主分类号 |
H02H9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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