发明名称 ESD improvement with dynamic substrate resistance
摘要 In some embodiments, an electrostatic discharge (ESD) protection circuit includes a substrate resistance control circuit coupled to a body of a first NMOS transistor. The substrate resistance control circuit increases a resistance of the body of the first NMOS transistor during an ESD event. The first NMOS transistor has a drain coupled to an input/output (I/O) pad and a gate coupled to a first voltage source. The first voltage source is set at ground potential.
申请公布号 US8009399(B2) 申请公布日期 2011.08.30
申请号 US20090548586 申请日期 2009.08.27
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LAI DA-WEI
分类号 H02H9/00;H02H1/00;H02H1/04;H02H3/22;H02H7/12 主分类号 H02H9/00
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