| 摘要 |
A method for manufacturing a semiconductor device includes forming in order a barrier film, an insulating film, a first mask, and a second mask having etching properties different from those of the first mask on a substrate, removing the insulating film, the first mask, and the second mask to form a via hole in the insulating film, removing the second mask in a wiring trench forming region including the via hole, and etching the first mask using the second mask as a mask to remove the first mask in the wiring trench forming region. Removing the first mask in the wiring trench forming region includes etching the first mask and etching the barrier film at the bottom of the via hole to partially remove the barrier film at the bottom of the via hole.
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