Methods of fabricating a semiconductor device include alternatingly and repeatedly stacking sacrificial layers and first insulating layers on a substrate, forming an opening penetrating the sacrificial layers and the first insulating layers, and forming a spacer on a sidewall of the opening, wherein a bottom surface of the opening is free of the spacer. A semiconductor layer is formed in the opening. Related devices are also disclosed.
申请公布号
KR20110096413(A)
申请公布日期
2011.08.30
申请号
KR20100015842
申请日期
2010.02.22
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, JUNG HO;HWANG, KI HYUN;YANG, SANG RYOL;SON, YONG HOON;KIM, JU EUN