发明名称 Characterization technique for dielectric properties of polymers
摘要 A test structure for polymer characterization over a wide frequency range, temperature range and under an applied DC electric field is disclosed. A high resistivity silicon substrate is topped by an adhesion layer. A polymer thin-film is deposited on a patterned metal1 layer which is deposited on top of the adhesion layer. A top metal2 layer is deposited on the polymer thin-film and patterned to form a CPW transmission line. A single bias voltage is applied to the center conductor of the CPW transmission line on metal2 and influences dielectric properties of the polymer. The dielectric permittivity and the loss-tangent of the polymer can be derived as functions of electric field and temperature by measuring the swept frequency scattering parameters and matching the experimental frequency response to the modeled frequency response. The electrical conductance properties of the polymer can be accurately characterized using the test structure over a wide temperature range.
申请公布号 US8008930(B2) 申请公布日期 2011.08.30
申请号 US20060909646 申请日期 2006.03.23
申请人 UNIVERSITY OF DAYTON 发明人 SUBRAMANYAM GURU
分类号 G01R27/26 主分类号 G01R27/26
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