发明名称 SPUTTERING TARGET AND METHOD OF FORMING FILM
摘要 <p>The present invention relates to a sputtering target including (Co and Pt) or (Co, Cr, and Pt); Si0[err] and/or Ti0[err];and Co[err]O[err] and/or CoO. A magnetic recording film having a granular structure and high coercivity can be formed by performing sputtering using the sputtering target according to the present invention. By producing the sputtering target according to the present invention by sintering a powder ofraw materials at 1000°C or lower, Si0[err], Ti0[err], CO[err]O[err], and CoO can be prevented from being reduced during the sintering to give a more effective sputtering target.</p>
申请公布号 SG172395(A1) 申请公布日期 2011.08.29
申请号 SG20110046885 申请日期 2009.12.24
申请人 MITSUI MINING & SMELTING CO., LTD. 发明人 HAYASHI, HIROMITSU
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