发明名称 |
COMPOSITION FOR POST CHEMICAL-MECHANICAL POLISHING CLEANING |
摘要 |
The present invention relates to a composition for post chemical-mechanical polishing (CMP) cleaning. The composition is alkaline, which can remove azole-type corrosion inhibitors on the wafer surface after CMP. This composition can effectively remove azole compounds, increase wettability of the Cu surface, and significantly improve the defect removal after CMP.
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申请公布号 |
SG172360(A1) |
申请公布日期 |
2011.08.29 |
申请号 |
SG20110046331 |
申请日期 |
2010.01.06 |
申请人 |
BASF SE |
发明人 |
KLIPP, ANDREAS;HUNG, TING HSU;SU, KUOCHEN;TU, SHENG-HUNG |
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