| 摘要 |
A photoresist remover composition used in a process for producing copper or copper alloy interconnects of a semiconductor substrate or FPD substrate. The photoresist remover composition does not contain a benzotriazole or a compound having a thiol and does not corrode copper or copper alloy interconnects nor multilayer metal interconnects of copper or a copper alloy and molybdenum or a molybdenum alloy. Also, a method for removing a photoresist of a multilayer metal circuit board comprising using the photoresist remover composition; and a method for producing a multilayer metal circuit board comprising using the photoresist remover composition. The photoresist remover composition contains (A) 1 to 50% by weight of a secondary alkanol amine and/or a tertiary alkanol amine, (B) 5 to 85% by weight of an aqueous organic solvent, (C) 0.002 to 0.1% by weight of an amino acid containing two or more nitrogen atoms in each molecule without having a thiol group and an amide structure, and (D) 10 to 93.998% by weight of water, with the total amount of the components (B) and (D) being 49.9 to 98.998% by weight. The solution obtained by diluting the photoresist remover composition 20 times, in a weight ratio, with water has a pH of more than 8. |
