发明名称 METHOD FOR PRODUCING A SINGLE CRYSTAL COMPOSED OF SILICON USING MOLTEN GRANULES
摘要 <p>AbstractMethod for producing a single crystal composed of silicon using molten granulesMethod for producing a silicon single crystal using molten granules, comprising producing a first volume of molten silicon between a growing single crystal and a closed off lower end of a conical silicon tube which encloses a central opening of a rotating silicon plate, below which the tube extends, by means of a first induction heating coil, which is arranged below the plate; producing a second volume of molten silicon by means of a second induction heating coil, which is arranged above the plate;melting the lower end of the tube such that a passage opening for the second volume is produced at a point in time at which the second volume of molten silicon is not yet present or is less than double the volume of the first volume; and crystallizing silicon on the growing single crystal with consumption of molten silicon from the first and the second volume.Fig. 1</p>
申请公布号 SG173302(A1) 申请公布日期 2011.08.29
申请号 SG20110007549 申请日期 2011.02.01
申请人 SILTRONIC AG 发明人 AMMON WILFRIED VON;ALTMANNSHOFER LUDWIG
分类号 主分类号
代理机构 代理人
主权项
地址