CMP METHOD FOR METAL-CONTAINING SUBSTRATES

摘要

An aqueous chemical-mechanical polishing composition for polishing metal containing substrates comprising an abrasive particle consisting essentially of a primary particle modified with an aluminosilicate layer, and wherein the abrasive particle has a zeta potential measured at pH 2.3 of about -5 mV to about -100mV. The composition can be used to polish the surface of a tungsten containing substrate.Figure 1