发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
It is an object to provide a semiconductor device including an oxide semiconductor, in which miniaturization of a transistor is achieved and the concentration of an electric field is relieved. The width of a gate electrode is reduced and a space between a source electrode layer and a drain electrode layer is shortened. By adding a rare gas in a self-alignment manner with the use of a gate electrode as a mask, a low-resistance region in contact with a channel formation region can be provided in an oxide semiconductor layer. Accordingly, even when the width of the gate electrode, that is, the line width of a gate wiring is small, the low-resistance region can be provided with high positional accuracy, so that miniaturization of a transistor can be realized. |
申请公布号 |
WO2011102217(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
WO2011JP52074 |
申请日期 |
2011.01.26 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;AKIMOTO, KENGO;WATANABE, RYOSUKE;TSUBUKU, MASASHI;YAMAZAKI, SHUNPEI |
发明人 |
AKIMOTO, KENGO;WATANABE, RYOSUKE;TSUBUKU, MASASHI;YAMAZAKI, SHUNPEI |
分类号 |
H01L21/336;G02F1/1368;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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