| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly precise drawing method executed by an electron beam lithography system. SOLUTION: The electron beam lithography system includes a device which projects an electron beam to draw a plurality of patterns with different drawing area percentages on a drawing subject material, the patterns being arranged in a matrix formation for each of a plurality of light exposure quantities and objective lens values, and bakes and develops the drawing subject material to make evaluation pattern, a device which creates CD data of drawing line widths to light exposure qualities for each objective lens value, based on a result of measuring drawing line widths of the made evaluation pattern, a device which fits the CD data of drawing line widths to a CD curve function to determine a drawing line width blur tb, a rear scattering coefficientη, and a resolution threshold Rth that is used when the drawing subject material is developed, a device which determines an optimum objective lens value that makes the drawing line width blur tb the minimum to set an objective lens value, and a device which carries out graphical drawing based on pattern data while carrying out proximity effect correction, using the set objective lens value. COPYRIGHT: (C)2011,JPO&INPIT |
