| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer preventing occurrence of dislocation even when LSA (Laser Spike Anneal) processing is performed in a device process. SOLUTION: The epitaxial wafer includes a wafer body 11 where nitrogen concentration is set≥1×10<SP>12</SP>atoms/cm<SP>3</SP>or specific resistance is set≤20 mΩcm by boron doping, and an epitaxial layer 12 formed on a surface of the wafer body 11. When a heat treatment for 4 hours at 750°C is performed to the wafer body 11 and thereafter a heat treatment for 4 hours at 1,000°C is performed thereto, a polyhedral oxygen precipitate dominantly grows relative to a plate-like oxygen precipitate. Thereby, since the plate-like oxygen precipitate is hardly formed in a device process, occurrence of dislocation starting from the oxygen precipitate can be prevented even when LSA processing is performed after passing through various kinds of thermal history in the device process. COPYRIGHT: (C)2011,JPO&INPIT |
