| 摘要 |
PROBLEM TO BE SOLVED: To easily and accurately stack semiconductor devices in three dimensions while suppressing the increase of a manufacturing cost. SOLUTION: When a first semiconductor substrate 101 and a second semiconductor substrate 111 are bonded, a first guide pattern 108 is formed on an opposed surface to the second semiconductor substrate 111 in the first semiconductor substrate 101 and a second guide pattern 118 corresponding to the first guide pattern 108 is formed on the opposed surface to the first semiconductor substrate 101 in the second semiconductor substrate 111. Consequently, the first semiconductor substrate 101 and the second semiconductor substrate 111 are aligned in the substrate primary surface horizontal direction. COPYRIGHT: (C)2011,JPO&INPIT
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