发明名称 |
Information storage devices using movement of magnetic domain walls and methods of manufacturing the same |
摘要 |
An information storage device using movement of magnetic domain walls includes a writing magnetic layer having a magnetic domain wall. A stack structure is formed on the writing magnetic layer. The stack structure includes a connecting magnetic layer and an information storing magnetic layer stacked sequentially. The information storage device also includes a reader for reading information stored in the information storing magnetic layer.
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申请公布号 |
US2011207240(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
US201113064894 |
申请日期 |
2011.04.25 |
申请人 |
LIM CHEE-KHENG;CHO EUN-HYOUNG;CHOA SUNG-HOON |
发明人 |
LIM CHEE-KHENG;CHO EUN-HYOUNG;CHOA SUNG-HOON |
分类号 |
H01L21/8239 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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