发明名称 Information storage devices using movement of magnetic domain walls and methods of manufacturing the same
摘要 An information storage device using movement of magnetic domain walls includes a writing magnetic layer having a magnetic domain wall. A stack structure is formed on the writing magnetic layer. The stack structure includes a connecting magnetic layer and an information storing magnetic layer stacked sequentially. The information storage device also includes a reader for reading information stored in the information storing magnetic layer.
申请公布号 US2011207240(A1) 申请公布日期 2011.08.25
申请号 US201113064894 申请日期 2011.04.25
申请人 LIM CHEE-KHENG;CHO EUN-HYOUNG;CHOA SUNG-HOON 发明人 LIM CHEE-KHENG;CHO EUN-HYOUNG;CHOA SUNG-HOON
分类号 H01L21/8239 主分类号 H01L21/8239
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