发明名称 |
CHEMICAL-MECHANICAL PLANARIZATION OF SUBSTRATES CONTAINING COPPER, RUTHENIUM, AND TANTALUM LAYERS |
摘要 |
<p>A chemical-mechanical polishing composition comprising: (a) at least one type of abrasive particles; (b) at least two oxidizing agents; (c) at least one pH adjusting agent; and (d) deionized water; (e) optionally comprising at least one antioxidant, and a method for the chemical-mechanical planarization of a substrate containing at least one copper layer, at least one ruthenium layer, and at least one tantalum layer comprising the steps of (1 ) providing the said chemical-mechanical polishing composition; (2) contacting the substrate surface to be polished with the chemical-mechanical polishing composition and a polishing pad; and (3) chemically and mechanically polishing the substrate surface by way of moving the polishing pad relative to the substrate.</p> |
申请公布号 |
WO2011101755(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
WO2011IB50238 |
申请日期 |
2011.01.19 |
申请人 |
BASF SE;BASF (CHINA) COMPANY LIMITED;LI, YUZHUO;WANG, KE |
发明人 |
LI, YUZHUO;WANG, KE |
分类号 |
C09G1/02 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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