| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve conversion efficiency of a photoelectric conversion element without using KCN for surface processing on a photoelectric conversion semiconductor layer. <P>SOLUTION: A method of manufacturing the photoelectric conversion element 1 has a lower electrode 20, the photoelectric conversion semiconductor layer 30, a buffer layer 40, and a translucent conductive layer 60 laminated in order on a substrate 10. In the method of manufacturing the photoelectric conversion element 1, the buffer layer 40 is formed on the photoelectric conversion semiconductor layer 30 having been subjected to the surface processing after a surface of the photoelectric conversion semiconductor layer 30 is processed with a surface processing liquid containing a compound having an amino group, and hydrogen peroxide. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
