| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology for preventing degradation of reliability of a semiconductor device caused by gasification of a part of a constituent of a material constituting a wiring board. <P>SOLUTION: Wiring layers 7 respectively constituting circuit patterns on the front surface and the back surface of a glass epoxy board 1 are formed; solder resist 8 covering the wiring layers 7 by partially exposing the wiring layers 7 is formed; and thereafter a heat treatment (second heat treatment) at 160°-230°C by which an organic solvent included in a material constituting a wiring board 1A is gasified and discharged is performed to the wiring board 1A before a heat treatment (first heat treatment) at 100-150°C for dehumidification. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| 申请公布号 |
JP2011166076(A) |
申请公布日期 |
2011.08.25 |
| 申请号 |
JP20100030336 |
申请日期 |
2010.02.15 |
| 申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
KURODA SOJI;YASUNAGA MASATOSHI;MATSUSHIMA HIROTSUGU;HIRONAGA KAZUYA |
| 分类号 |
H05K3/22;H01L23/12;H05K3/00;H05K3/18 |
主分类号 |
H05K3/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
