| 摘要 |
PROBLEM TO BE SOLVED: To suppress dielectric breakdown of a capacitive insulating film caused by abnormal discharge during formation of an MIM capacitive element and obtain the MIM capacitive element having a high capacity density. SOLUTION: A semiconductor device includes an MIM capacitive element 1 consisting of a lower electrode 4, a capacitive insulating film 5 and an upper electrode 6 on a semiconductor substrate 2. An upper electrode metal film constituting the upper electrode 4 has an interfacial surface with the capacitive insulating film 5, formed by a metal nitride film such as an amorphous TiN film deposited by metal organic vapor phase epitaxy (MOCVD) without using plasma. COPYRIGHT: (C)2011,JPO&INPIT |
