| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a dislocation-free single-crystal silicon by the Czochralski method. SOLUTION: The method includes a particle removing step of removing particles having an average particle diameter of less than 250μm included in raw material silicon before melting. The particle removing step comprises at least one of steps of subjecting the raw material silicon to a cleaning process with ultrapure water, subjecting the raw material silicon to a blow process with a compressed gas, and subjecting the raw material silicon in a sieving process, or a combination of these steps. COPYRIGHT: (C)2011,JPO&INPIT
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